| PART |
Description |
Maker |
| KVR400X64C3AK2/1G |
1024MB 400MHz DDR Non-ECC CL3 (3-3-3) DIMM (Kit of 2) 1024MB00MHz的复员非ECC CL3-3-3）内存（2盒）
|
Ecliptek, Corp.
|
| KVR400X64C3A/1G |
1024MB 400MHz DDR Non-ECC CL3 (3-3-3) DIMM 1024MB00MHz的复员非ECC CL3-3-3）内
|
Electronic Theatre Controls, Inc.
|
| M381L6523DUM-LCC M368L2923DUN-CB3 M368L2923DUN-CCC |
DDR SDRAM Unbuffered Module 184pin Unbuffered Module based on 512Mb D-die with 64/72-bit Non ECC/ECC 66 TSOP-II with Pb-Free (RoHS compliant)
|
SAMSUNG[Samsung semiconductor]
|
| W3EG128M72ETSU262D3 W3EG128M72ETSU403JD3 W3EG128M7 |
1GB - 128Mx72 DDR SDRAM UNBUFFERED ECC w/PLL
|
WEDC[White Electronic Designs Corporation]
|
| W3EG72255S-AJD3 |
2GB - 2x128Mx72 DDR SDRAM REGISTERED ECC, w/PLL
|
White Electronic Design...
|
| W3EG7217S262D3 W3EG7217S265D3 W3EG7217S202D3 W3EG7 |
128MB - 16Mx72 DDR SDRAM REGISTERED, ECC w/PLL
|
WEDC[White Electronic Designs Corporation]
|
| W3EG72128S-AD4 W3EG72128SXXXD4ISG W3EG72128S202AD4 |
1GB - 2x64Mx72 DDR SDRAM UNBUFFERED ECC w/PLL
|
WEDC[White Electronic Designs Corporation]
|
| W3EG7264S335BD4 W3EG7264S202AD4 W3EG7264S202BD4 W3 |
512MB - 2x32Mx72 DDR ECC SDRAM UNBUFFERED w/PLL
|
WEDC[White Electronic Designs Corporation]
|
| W3EG72126S202JD3 W3EG72126S-AJD3 W3EG72126S-D3 W3E |
1GB-128Mx72 DDR SDRAM REGISTERED ECC w/PLL
|
White Electronic Designs Corporation
http://
White Electronic Design...
|
| W3EG2128M72AFSR403AD3XG W3EG2128M72AFSR262AD3XG W3 |
2GB - 2x128Mx72 DDR SDRAM REGISTERED ECC, w/PLL, FBGA
|
WEDC[White Electronic Designs Corporation]
|
| M368L6523BUM-LCC M381L6523BUM-LB3 M368L6523BTM-LCC |
64M X 64 DDR DRAM MODULE, 0.65 ns, DMA184
128M X 64 DDR DRAM MODULE, 0.65 ns, DMA184
128M X 72 DDR DRAM MODULE, 0.7 ns, DMA184
DDR SDRAM Unbuffered Module 184pin Unbuffered Module based on 512Mb B-die with 64/72-bit Non ECC/ECC 66 TSOP-II DDR SDRAM的缓冲模84pin缓冲模块基于512Mb乙芯片与64/72-bit非ECC / ECC6 TSOP-II
Flash Memory IC; Memory Size:4Mbit; Supply Voltage Max:3V; Package/Case:48-TSOP; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Access Time, Tacc:70ns; Series:S29AL
Flash Memory IC; Memory Size:4Mbit; Supply Voltage Max:3V; Package/Case:48-FBGA; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Access Time, Tacc:90ns; Series:S29AL
Single-Supply Voltage Translator 6-SOT-23 -40 to 85
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| HDD32M72B9 HDD32M72B9-13A HDD32M72B9-13B HDD32M72B |
DDR SDRAM Module 256Mbyte (32Mx72bit), based on32Mx8,4Banks, 8K Ref., ECC Unbuffered SO-DIMM
|
http://
HANBIT[Hanbit Electronics Co.,Ltd]
|
